# I think the answer that someone solved, is not correct. ms025 v, 100 nm gate Calculate...

###### Question:

I think the answer that someone solved, is not correct. ms025 v, 100 nm gate Calculate Vr of a Si n-channel MOSFET with oxide thickness, NA -10"/cm2, and oxide charge density 5 x 1018 C/cm2 for a substrate bias of-2 (QD-б x10-8 C/cm2) If the channel mobility is 250 cm2/N-sec, then what will be the drive current for a 50-nm channel MOSFET with gate bias at 2 V working at saturation region? The length of the MOSFET is 2 pum. .21 μη- tonc

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